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Biography
Dr. Yu K. Undalov is a distinguished researcher at the Ioffe Physical-Technical Institute of the Russian Academy of Sciences, located in Saint Petersburg, Russia. He holds a Doctor of Engineering degree and is affiliated with the Laboratory of Semiconductors Physicochemical Properties. His academic contributions span several decades, with a focus on the physicochemical properties of semiconductors and the development of novel materials for electronic and optoelectronic applications.
numerous publications, including the development of methods for calculating formulas of homologous series of chemical compounds in generalized forms. His work has been instrumental in advancing the understanding of multicomponent chemical systems and their applications in material science. He has also contributed to research on the formation and properties of silicon nanoclusters in amorphous silicon suboxide films, which are relevant for the development of advanced electronic devices.
In addition to his research, Dr. Undalov has been involved in collaborative projects with various institutions, including Voronezh State University, reflecting his active participation in the scientific community. His expertise and contributions continue to influence the field of semiconductor physics and materials science.
Research Interest
Dr. Yu K. Undalov's research primarily focuses on semiconductor physics, specifically the physicochemical properties of semiconductor materials and their applications in electronic and optoelectronic devices. His work explores the development and characterization of novel materials for advanced technologies. He has made significant contributions to understanding multicomponent chemical systems, particularly in relation to the formation of silicon nanoclusters in amorphous silicon suboxide films, which hold relevance for next-generation electronic devices. Dr. Undalov is also interested in the development of computational methods for the calculation of chemical compound formulas, contributing to material science by improving the accuracy and efficiency of theoretical models. His work bridges material science and engineering, aiming to enhance the performance and functionality of semiconductor-based devices. Additionally, Dr. Undalov collaborates with institutions such as Voronezh State University, advancing research through academic partnerships and fostering innovations in semiconductor technology.
Open Access Policy refers to a set of principles and guidelines aimed at providing unrestricted access to scholarly research and literature. It promotes the free availability and unrestricted use of research outputs, enabling researchers, students, and the general public to access, read, download, and distribute scholarly articles without financial or legal barriers. In this response, I will provide you with an overview of the history and latest resolutions related to Open Access Policy.
For the first time, a method for calculating formulas of homologous series of chemical compounds of the systems (Aa+ – Bb+ – Cc–) and {Zn2+ – Ge4+ – P3–} in a generalized form is presented. The calculation is confirmed by the literature experimentally obtained compounds: thirteen compounds of the system (Na+ – Ti4+ – O2–), seven – systems (Li+ – Ti4+ – O2–), five – systems (K+ – V5a+ – – O2–), eight – systems (Ba2+ – Cu2...+ – O2*). Homological series in (Aa+ – Bb+ – Cc–) have the following generalized form: A{t – k·r + nr – r)bcBracC{t – k·r + nr)ab and AtbcB{r – k·t + nt – t}acC (r – k·t + nt)ab.In (Zn2+ – Ge4+ – P3–) systems for the m-group the formulas of homologous series, that develops towards Ge3P4, have the following generalized form: Zn6tGe(6r – 6kt + 6n – 6t)P(8r – 8kt + 8n) and for αm-homologous series – Zn6Ge3nP4(n + 1). A method for calculating formulas of homologous series of chemical compounds in a generalized form can be used for any system of chemical elements.
